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| Previous Datasheet Index Next Data Sheet PD - 9.692A IRGPC40S INSULATED GATE BIPOLAR TRANSISTOR Features * Switching-loss rating includes all "tail" losses * Optimized for line frequency operation (to 400Hz) See Fig. 1 for Current vs. Frequency curve G E C Standard Speed IGBT VCES = 600V VCE(sat) 1.8V @VGE = 15V, IC = 31A n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications. TO-247AC Absolute Maximum Ratings Parameter VCES IC @ TC = 25C IC @ TC = 100C ICM ILM VGE EARV PD @ TC = 25C PD @ TC = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting torque, 6-32 or M3 screw. Max. 600 50 31 240 120 20 15 160 65 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf*in (1.1N*m) Units V A V mJ W C Thermal Resistance Parameter RJC RCS RJA Wt Junction-to-Case Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight Min. -- -- -- -- Typ. -- 0.24 -- 6 (0.21) Max. 0.77 -- 40 -- Units C/W g (oz) C-27 To Order Previous Datasheet Index Next Data Sheet IRGPC40S Electrical Characteristics @ T = 25C (unless otherwise specified) J V(BR)CES V(BR)ECS V(BR)CES/TJ VCE(on) Parameter Collector-to-Emitter Breakdown Voltage Emitter-to-Collector Breakdown Voltage Temp. Coeff. of Breakdown Voltage Collector-to-Emitter Saturation Voltage VGE(th) VGE(th)/TJ gfe ICES IGES Gate Threshold Voltage Temp. Coeff. of Threshold Voltage Forward Transconductance Zero Gate Voltage Collector Current Gate-to-Emitter Leakage Current Min. Typ. Max. Units Conditions 600 -- -- V VGE = 0V, IC = 250A 20 -- -- V VGE = 0V, IC = 1.0A -- 0.75 -- V/C VGE = 0V, IC = 1.0mA -- 1.6 1.8 IC = 31A VGE = 15V -- 2.2 -- V IC = 60A See Fig. 2, 5 -- 1.7 -- IC = 31A, TJ = 150C 3.0 -- 5.5 VCE = VGE, IC = 250A -- -9.3 -- mV/C VCE = VGE, IC = 250A 12 21 -- S VCE = 100V, IC = 31A -- -- 250 A VGE = 0V, VCE = 600V -- -- 1000 VGE = 0V, VCE = 600V, TJ = 150C -- -- 100 nA VGE = 20V Switching Characteristics @ T = 25C (unless otherwise specified) J Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. Max. Units Conditions 62 90 IC = 31A 10 15 nC VCC = 400V See Fig. 8 27 40 VGE = 15V 28 -- TJ = 25C 50 -- ns IC = 31A, VCC = 480V 1100 1500 VGE = 15V, RG = 10 620 1100 Energy losses include "tail" 1.0 -- 12 -- mJ See Fig. 9, 10, 11, 14 13 20 29 -- TJ = 150C, 53 -- ns IC = 31A, VCC = 480V 1600 -- VGE = 15V, RG = 10 1200 -- Energy losses include "tail" 22 -- mJ See Fig. 10, 14 7.5 -- nH Measured 5mm from package 1600 -- VGE = 0V 140 -- pF VCC = 30V See Fig. 7 20 -- = 1.0MHz Notes: Repetitive rating; VGE=20V, pulse width limited by max. junction temperature. ( See fig. 13b ) VCC=80%(VCES), VGE=20V, L=10H, RG= 10, ( See fig. 13a ) Repetitive rating; pulse width limited by maximum junction temperature. Pulse width 80s; duty factor 0.1%. Pulse width 5.0s, single shot. C-28 To Order Previous Datasheet Index Next Data Sheet IRGPC40S 80 Fo r bo th: Tria ngu lar w av e: LO A D C U R RE NT (A ) 60 D uty c yc le: 50% T J = 125 C T s in k = 90C G ate d riv e as s pec ified P ow er D issipation = 35W S quare w ave: C lam p voltage: 80% of ra ted 40 60% of rated voltage 20 Ideal diodes 0 0.1 1 10 100 f, F re quency (kH z) Fig. 1 - Typical Load Current vs. Frequency (For square wave, I=IRMS of fundamental; for triangular wave, I=I ) PK 1000 1000 I C , C ollector-to-E mitter C urrent (A ) IC , C ollector-to-E mitter C urrent (A ) TJ = 25 C TJ = 1 50 C 100 TJ = 25 C 100 TJ = 15 0C 10 10 1 0.1 1 V G E = 15 V 20 s P U L S E W ID TH 10 1 5 10 V C C = 1 00 V 5 s P UL S E W IDTH 15 20 V C E , C o llector-to-Em itter V oltage (V) V G E , G ate -to-E m itter V olta ge (V ) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics C-29 To Order Previous Datasheet Index Next Data Sheet IRGPC40S 70 V G E = 1 5V 3.0 M axim um D C C ollector C urrent (A ) 60 V CE , Collector-to-E m itter V oltage (V) LIMITED BY PACKAGE VG E = 1 5 V 80 s P UL S E W ID TH I C = 62 A 2.5 50 40 2.0 30 I C = 31 A 20 1.5 10 I C = 1 6A 0 25 50 75 100 125 150 1.0 -60 -40 -20 0 20 40 60 80 1 00 120 140 160 T C , C ase Tem perature (C ) TC , C ase Tem perature (C ) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Collector-to-Emitter Voltage vs. Case Temperature 1 T herm al Response (Z th JC ) D = 0 .5 0 0.2 0 0.1 0.1 0 0 .05 SIN G LE P UL SE (TH ER MA L R E SP O NS E ) N o te s: 1 . D u ty fa c to r D = t 1 /t 2 PD M t 1 t2 0.0 2 0.0 1 0.01 0.00001 2 . P e a k TJ = P D M x Z thJ C + T C 0.0001 0.001 0.01 0.1 1 10 t 1 , R ectangular Pulse D uration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case C-30 To Order Previous Datasheet Index Next Data Sheet IRGPC40S 30 0 0 Cies 20 0 0 Coes V G E , G ate-to-E m itter V oltage (V) 100 V GE = 0V, f = 1MHz C ies = C ge + C gc , Cce SHORTED C res = C gc C oes = C ce + C gc 20 V C E = 40 0 V I C = 3 1A 16 C , C apacitance (pF ) 12 8 10 0 0 Cres 4 0 1 10 0 0 10 20 30 40 50 60 V C E , C o llector-to-Em itter V oltage (V) Q g , Total G ate C harge (nC ) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 1 4 .6 To ta l S w itch in g Losses (m J) 1 4 .2 To ta l S w itc hing Lo sse s (m J) 1 4 .4 VC C VG E TC IC = 4 80 V = 15 V = 25 C = 3 1A 100 R G = 10 V GE = 1 5V V CC = 48 0V I C = 6 2A I C = 3 1A I C = 16 A 1 4 .0 10 1 3 .8 1 3 .6 1 3 .4 1 3 .2 0 10 20 30 40 50 60 1 -60 -40 -20 0 20 40 60 80 1 00 120 140 160 R G , G ate R es istance ( ) W TC , C a se T e m p e ra tu re (C ) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Case Temperature C-31 Revision 0 To Order Previous Datasheet Index Next Data Sheet IRGPC40S 50 40 I C , C o lle c to r-to -E m itte r C u rre n t (A ) T o ta l S w itc hin g L o s s e s (m J ) RG TC VCC VGE = 10 = 1 50C = 48 0V = 1 5V 1000 VG E E 20 V G= T J = 125 C 100 30 S A FE O P E R A TING A R E A 20 10 10 0 0 10 20 30 40 50 60 70 1 1 10 100 1000 I C , C o lle c to r-to -E m itte r C u rre n t (A ) V C E , C o lle cto r-to-E m itte r V olta g e (V ) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Turn-Off SOA Refer to Section D for the following: Appendix C: Section D - page D-5 Fig. 13a - Clamped Inductive Load Test Circuit Fig. 13b - Pulsed Collector Current Test Circuit Fig. 14a - Switching Loss Test Circuit Fig. 14b - Switching Loss Waveform Package Outline 3 - JEDEC Outline TO-247AC (TO-3P) Section D - page D-13 C-32 To Order |
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